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Samsung will make RRAM more accessible

The waves raised by the appearance of the first commercial magnetic resistive memory (MRAM) chips two months ago have not died down: a month ago STMicroeletronics spoke on this topic, and the other day Samsung shared its thoughts on the issue of a new generation of nonvolatile memory. More precisely, Samsung announced its intention to inform the scientific community about the progress made in the field of resistive memory made of polymer materials during the IEDM (International Electron Devices Meeting) conference, which will be held in San Francisco from December 11 to 13. As in the case of FeRAM and OUM, which are still far from real implementation, unlike MRAM, supporters of alternative technologies still do not lose hope of catching up with Motorola, and, if possible, overtaking.

Samsung researchers have succeeded to date to create a composite structure consisting of alternating layers of resistive and highly conductive polymers (polyimide and PCBM). This structure is the working body of the memory device, made according to the 4F2 cross architecture and allows you to record and store information even in the absence of electrical power.

Traditionally, research on resistive memory (RRAM) has focused on architectures in which a thin layer of metal dioxide is converted to a more complex peroxide by an electrical pulse. It was assumed that such devices will be able to provide high density and low power consumption, in addition to the non-volatility of the information stored in them.

The main achievement of Samsung, which is quite actively working on RRAM technologies, is to demonstrate not only the possibility of creating a working fluid from polymer structures, but also their processing at low temperatures, which allows them to be applied to semiconductor chips of industrialized microcircuits. At the same time, the operating temperature of Samsung’s silicon-polymer memory reaches 300 degrees Celsius – without sacrificing performance. The stated guaranteed number of rewriting cycles is 2000.

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